Abbreviated Journal Title
Appl. Phys. Lett.
ZINC-OXIDE; THIN-FILMS; GROWN ZNO; HYDROGEN; EPITAXY; Physics, Applied
ZnO/ZnCdO/ZnO multiple quantum well samples grown on sapphire substrates by molecular beam epitaxy and annealed in situ were exposed to D(2) plasmas at 150 degrees C. The deuterium showed migration depths of similar to 0.8 mu m for 30 min plasma exposures, with accumulation of (2)H in the ZnCdO wells. The photoluminescence (PL) intensity from the samples was increased by factors of 5 at 5 K and similar to 20 at 300 K as a result of the deuteration, most likely due to passivation of competing nonradiative centers. Annealing up to 300 degrees C led to increased migration of (2)H toward the substrate but no loss of deuterium from the sample and little change in the PL intensity. The initial PL intensities were restored by annealing at > = 400 degrees C as (2)H was evolved from the sample (similar to 90% loss by 500 degrees C). By contrast, samples without in situ annealing showed a decrease in PL intensity with deuteration. This suggests that even moderate annealing temperatures lead to degradation of ZnCdO quantum wells. (c) 2008 American Institute of Physics.
Applied Physics Letters
Lim, W.; Norton, D. P.; Pearton, S. J.; Wang, X. J.; Chen, W. M.; Buyanova, I. A.; Osinsky, A.; Dong, J. W.; Hertog, B.; Thompson, A. V.; Schoenfeld, W. V.; Wang, Y. L.; and Ren, F., "Migration and luminescence enhancement effects of deuterium in ZnO/ZnCdO quantum wells" (2008). Faculty Bibliography 2000s. 618.