Ternary chalcogenide glass films from identical parent bulk glasses were prepared by thermal evaporation (TE) and pulsed laser deposition (PLD) and subjected to 810-nm femtosecond laser exposure at both kHz and MHz repetition rates. The exposure-induced modification on the glass film's surface profile, refractive index, and structural properties were shown to be a function of laser irradiance, the number of laser pulses per focal spot, and repetition rate. Film response was shown to be related to deposition technique-related density and the number of glass bonds within the irradiated focal volume. The induced changes resulted from a reduction in glass network connectivity among GeS4/2, GeS4, S-S and S3Ge-S-GeS3 units.
Anderson, Troy; Petit, Laeticia; Calie, Nathan; Choi, Jiyeon; Hu, Juejun; Agarwal, Anu; Kimberling, Lionel; Richardson, Kathleen; and Richardson, Martin, "Femtosecond laser photo-response of Ge23Sb7S70 films" (2008). Faculty Bibliography 2000s. 72.