Abbreviated Journal Title
J. Appl. Phys.
Keywords
Physics, Applied
Abstract
Three-terminal single-electron transistor devices utilizing Al/Al(2)O(3) gate electrodes were developed for the study of electron transport through individual single-molecule magnets (SMMs). The devices were patterned via multiple layers of optical and electron beam lithography. Electromigration induced breaking of the nanowires reliably produces 1-3 nm gaps between which the SMM can be situated. Conductance through a single Mn(12) (3-thiophenecarboxylate) displays the Coulomb blockade effect with several excitations within +/- 40 meV.
Journal Title
Journal of Applied Physics
Volume
101
Issue/Number
9
Publication Date
1-1-2007
Document Type
Article; Proceedings Paper
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0021-8979
Recommended Citation
Henderson, J. J.; Ramsey, C. M.; del Barco, E.; Mishra, A.; and Christou, G., "Fabrication of nanogapped single-electron transistors for transport studies of individual single-molecule magnets" (2007). Faculty Bibliography 2000s. 7221.
https://stars.library.ucf.edu/facultybib2000/7221
Comments
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