Abbreviated Journal Title
J. Appl. Phys.
Three-terminal single-electron transistor devices utilizing Al/Al(2)O(3) gate electrodes were developed for the study of electron transport through individual single-molecule magnets (SMMs). The devices were patterned via multiple layers of optical and electron beam lithography. Electromigration induced breaking of the nanowires reliably produces 1-3 nm gaps between which the SMM can be situated. Conductance through a single Mn(12) (3-thiophenecarboxylate) displays the Coulomb blockade effect with several excitations within +/- 40 meV.
Journal of Applied Physics
Article; Proceedings Paper
Henderson, J. J.; Ramsey, C. M.; del Barco, E.; Mishra, A.; and Christou, G., "Fabrication of nanogapped single-electron transistors for transport studies of individual single-molecule magnets" (2007). Faculty Bibliography 2000s. 7221.