An unassisted, low trigger-, and high holding-voltage SCR (uSCR) for on-chip ESD-protection applications
Abbreviated Journal Title
IEEE Electron Device Lett.
electrostatic discharge (ESD); high holding voltage; latch-up; low; trigger voltage; silicon-controlled rectifier (SCR); DEVICES; OUTPUT; Engineering, Electrical & Electronic
A new silicon-controlled rectifier (SCR) is proposed and realized in a 0.35-mu m/3.3-V fully salicided BiCMOS process for electrostatic-discharge (ESD) applications. Without using an external trigger circuitry, the unassisted SCR has a trigger voltage as low as 7 V to effectively protect deep-submicrometer MOS circuits, a holding voltage higher than the supply voltage to minimize transient influence and avoid latch-up issue, and a second snapback current density exceeding 60 mA/mu m to provide robust ESD-protection solutions.
Ieee Electron Device Letters
"An unassisted, low trigger-, and high holding-voltage SCR (uSCR) for on-chip ESD-protection applications" (2007). Faculty Bibliography 2000s. 7375.