Title

Voltage stress effect on class AB power amplifier and mixed-signal sample-hold circuit

Authors

Authors

J. S. Yuan;J. Ma

Comments

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Abbreviated Journal Title

Microelectron. Reliab.

Keywords

BIAS TEMPERATURE INSTABILITY; GATE-OXIDE BREAKDOWN; HOT-CARRIER STRESS; PERFORMANCE DEGRADATION; CMOS TECHNOLOGY; SOFT BREAKDOWN; RELIABILITY; IMPACT; LOCATION; MODEL; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

The effects of gate and drain voltage stress and breakdown location on the class AB power amplifier and mixed-signal sample-hold circuit have been studied. The soft breakdown has minor effect on the performance of the power amplifier and sample-hold circuit, while the hard breakdown at the drain side reduces the power efficiency of the class AB power amplifier and degrades the signal to noise ratio of the sample-hold circuit significantly. Also, hot electron effect reduces the linearity of the class AB power amplifier. (C) 2010 Elsevier Ltd. All rights reserved

Journal Title

Microelectronics Reliability

Volume

50

Issue/Number

6

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

801

Last Page

806

WOS Identifier

WOS:000278644400008

ISSN

0026-2714

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