Impact of strain on hot electron reliability of dual-band power amplifier and integrated LNA-mixer RF performances
Abbreviated Journal Title
Class-E power amplifier; Hot electron stress; LNA-mixer; Noise figure; Power efficiency; S-parameters; VOLTAGE STRESS; CARRIER STRESS; DEGRADATION; TRANSISTORS; TECHNOLOGY; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
Channel hot-electron-induced degradation on strained MOSFETs is examined experimentally. BSIM stressed model parameters are extracted from measurement and used in Cadence SpectreRF simulation to study the impact of channel hot electron stress on dual-band class-E power amplifier and integrated low-noise amplifier-mixer RF performances Channel hot electron effect decreases power efficiency of dual-band class-E power amplifier and increases the noise figure of low-noise amplifier-mixer combined circuit. (C) 2010 Elsevier Ltd All rights reserved
"Impact of strain on hot electron reliability of dual-band power amplifier and integrated LNA-mixer RF performances" (2010). Faculty Bibliography 2010s. 1005.