A Low-Energy Room-Temperature Hydrogen Nanosensor: Utilizing the Schottky Barriers at the Electrode/Sensing-Material Interfaces
Abbreviated Journal Title
IEEE Electron Device Lett.
Hydrogen sensor; interdigitated electrodes (IDEs); In(2)O(3)-doped; SnO(2); Schottky barrier; THIN-FILM; DIODE; SENSOR; Engineering, Electrical & Electronic
The hydrogen-sensing performance of a nanosensor integrating interdigitated electrodes with a gap of 100 nm and indium- oxide-doped tin dioxide nanoparticles is investigated at room temperature. The nonlinear behavior observed from the I/V curves of the sensor in air atmosphere indicated the presence of a Schottky barrier contact at the electrode/sensing-material interface. The linear I/V response obtained in hydrogen atmosphere suggested that the Schottky barrier height could be modulated in the presence of hydrogen. At a low applied voltage of 0.4 V and 0.09-vol% hydrogen gas exposure, a very large sensitivity of similar to 2300 and a short response time of similar to 127 s were recorded.
Ieee Electron Device Letters
"A Low-Energy Room-Temperature Hydrogen Nanosensor: Utilizing the Schottky Barriers at the Electrode/Sensing-Material Interfaces" (2010). Faculty Bibliography 2010s. 1012.