Fast release process of metal structure using chemical dry etching of sacrificial Si layer
Abbreviated Journal Title
Thin Solid Films
Chemical dry etching; Silicon; Release etching; Remote plasma; Nitric; oxide (NO); F-2 REMOTE PLASMAS; FLEXIBLE POLYIMIDE SUBSTRATE; SU-8 PHOTORESIST MASK; MICROSCALE METALLIZATION; SURFACE-ROUGHNESS; RATE ENHANCEMENT; ADDITIVE; GASES; APERTURE SIZE; SILICON; FABRICATION; Materials Science, Multidisciplinary; Materials Science, Coatings &; Films; Physics, Applied; Physics, Condensed Matter
An ultra-fast removal process of a silicon sacrificial layer for the selective release of a metal structure on a Si substrate was studied, which uses a chemical dry etching method. The chemical dry etching of a Si layer was performed in an NF(3) remote plasma with the direct injection of additive nitric oxide (NO) gas. When the NO gas was injected into the chamber into which F radicals were supplied from a remote plasma source using NF(3) input gas, the silicon layer was removed selectively and the metal structure could be released easily. It was found that the etch rate on the sidewall (up to congruent to 18.7 mu m/min for an opening width of 100 mu m) and the bottom (up to congruent to 24.5 mu m/min for an opening width of 100 mu m) depends on the NO/(NO + Ar) gas flow ratio, time duration, and opening width. The developed dry etching process could be used to release a Ni structure with near infinite selectivity in a very short time. The process is well suited for fabricating various devices which require a suspended structure, such as in radio-frequency microelectromechanical system switches, tunable capacitors, high-Q suspended inductors and suspended-gate metal-oxide semiconductor field-effect transistors. (C) 2011 Elsevier B.V. All rights reserved.
Thin Solid Films
Article; Proceedings Paper
"Fast release process of metal structure using chemical dry etching of sacrificial Si layer" (2011). Faculty Bibliography 2010s. 1041.