Adaptive Gate Bias for Power Amplifier Temperature Compensation
Abbreviated Journal Title
IEEE Trans. Device Mater. Reliab.
Bias circuit; hot electron; mixed-mode simulation; output power; power-added efficiency; power amplifier (PA); self-heating; temperature; compensation; DEVICE SIMULATION; CMOS CIRCUITS; STRAINED-SI; MOSFETS; MOBILITY; IMPACT; Engineering, Electrical & Electronic; Physics, Applied
Mixed-mode device and circuit simulation is used to examine device self-heating during power amplifier (PA) transient response. Lattice temperature increases with time and eventually saturates beyond the thermal time constant. Temperature variation on the effect of PA performances has been modeled and analyzed. Different gate biasing schemes that reduce the temperature drift of PA output power and power-added efficiency are evaluated. A simple adaptive gate bias technique effectively provides temperature compensation of PA performances over a wide range of temperatures.
Ieee Transactions on Device and Materials Reliability
"Adaptive Gate Bias for Power Amplifier Temperature Compensation" (2011). Faculty Bibliography 2010s. 1164.