Thermal reliability of VCO using InGaP/GaAs HBTs
Abbreviated Journal Title
HETEROJUNCTION BIPOLAR-TRANSISTOR; OSCILLATORS; TECHNOLOGY; DEVICE; NOISE; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
Degradations of InGaP/GaAs heterojunction bipolar transistor (HBT) collector current and base current subjected to cumulative long-term junction temperature stress are examined experimentally. The aged SPICE model parameters as a function of stress time are extracted from the measurement data. The VCO phase noise, tuning range, and output amplitude are studied in circuit simulation. The phase noise increases, tuning range and output amplitude decrease with increasing junction temperature. (C) 2011 Elsevier Ltd. All rights reserved.
"Thermal reliability of VCO using InGaP/GaAs HBTs" (2011). Faculty Bibliography 2010s. 1578.