Abbreviated Journal Title
Appl. Phys. Lett.
SCATTERING; Physics, Applied
ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy (for film). Indium tin oxide and Ti/Au were used as contacts to the ZnO nanowires and film, respectively. Characteristics of field-effect transistors using ZnO nanowires as channels indicate p-type conductivity of the nanowires. Electron beam induced current profiling confirmed the existence of ZnO p-n homojunction. Rectifying I-V characteristic showed a turn-on voltage of around 3 V. Very good response to ultraviolet light illumination was observed from photocurrent measurements.
Applied Physics Letters
Wang, Guoping; Chu, Sheng; Zhan, Ning; Lin, Yuqing; Chernyak, Leonid; and Liu, Jianlin, "ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection" (2011). Faculty Bibliography 2010s. 2069.