Emission Evolution of alpha-Silicon Nitride Nanowires with Temperature
Abbreviated Journal Title
J. Nanosci. Nanotechnol.
Silicon Nitride; Nanowires; Photoluminescence; Temperature; DANGLING-BOND CENTERS; THIN-FILMS; OPTICAL-PROPERTIES; VISIBLE; PHOTOLUMINESCENCE; POLYMERIC PRECURSOR; 1ST OBSERVATION; POINT-DEFECTS; MICROCAVITIES; NANOBELTS; CREATION; Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials; Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
The photoluminescence and temperature dependent emission spectra of silicon nitride nanowires were investigated by using femtosecond pulse laser. Three discrete sharp emission peaks were observed in photoluminescence, which were significantly different from that pumping by low excitation intensity laser. The temperature effects on emission peak energy were extracted using Gauss function, and should be attributed to volume-temperature effect and phonon effect.
Journal of Nanoscience and Nanotechnology
"Emission Evolution of alpha-Silicon Nitride Nanowires with Temperature" (2011). Faculty Bibliography 2010s. 2165.