Abbreviated Journal Title
J. Vac. Sci. Technol. B
HEMTS; MGO; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
The dc characteristics of InAlN/GaN high electron mobility transistors were measured before and after irradiation with 5 MeV protons at doses up to 2 x 10(15) cm(-2). The on/off ratio degraded by two orders of magnitude for the highest dose, while the subthreshold slope increased from 77 to 122 mV/decade under these conditions. There was little change in transconductance or gate or drain currents for doses up to 2 x 10(13) cm(-2), but for the highest dose the drain current and transconductance decreased by, similar to 40% while the reverse gate current increased by a factor of similar to 6. The minority carrier diffusion length was around 1 mu m independent of proton dose. The InAlN/GaN heterostructure is at least as radiation hard as its AlGaN/GaN counterpart.
Journal of Vacuum Science & Technology B
Lo, Chien-Fong; Liu, L.; Kang, T. S.; Ren, Fan; Schwarz, C.; Flitsiyan, E.; Chernyak, L.; Kim, Hong-Yeol; Kim, Jihyun; Yun, Sang Pil; Laboutin, O.; Cao, Y.; Johnson, J. W.; and Pearton, S. J., "Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation" (2012). Faculty Bibliography 2010s. 2959.