Title

NLDMOS ESD Scaling Under Human Metal Model for 40-V Mixed-Signal Applications

Authors

Authors

S. Malobabic; J. A. Salcedo; J. J. Hajjar;J. J. Liou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Electron Device Lett.

Keywords

Electrostatic discharge (ESD); human metal model (HMM); laterally; diffused MOS (LDMOS); Engineering, Electrical & Electronic

Abstract

Electrostatic discharge (ESD) robustness of LDMOS (laterally diffused MOS) devices is found to be highly dependent on the type of ESD stress. In particular, the device's ESD robustness does not scale with the device width, and this condition is substantially aggravated during the International Electrotechnical Commission (IEC) 61000-4-2 stress condition. IEC 61000-4-2 is a system-level ESD standard increasingly being adopted in the industry for ESD robustness assessment at the integrated circuit level. A comprehensive evaluation under the IEC 61000-4-2 stress impacting precision circuit designs is introduced in this letter for variable width LDMOS devices fabricated in a 0.18-mu m bipolar-CMOS-DMOS process for 40-V mixed-signal applications.

Journal Title

Ieee Electron Device Letters

Volume

33

Issue/Number

11

Publication Date

1-1-2012

Document Type

Article

Language

English

First Page

1595

Last Page

1597

WOS Identifier

WOS:000310387100028

ISSN

0741-3106

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