Title

Mathematical characterization of oxidized crystalline silicon nanowires grown by electroless process

Authors

Authors

R. G. Mertens;K. B. Sundaram

Comments

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Abbreviated Journal Title

Appl. Surf. Sci.

Keywords

Silicon; Nanowires; Oxidation; Orientation; THERMAL-OXIDATION; DRY OXYGEN; SI NANOWIRES; QUANTUM DOTS; DEPOSITION; SURFACE; REGIME; ARRAYS; FILM; Chemistry, Physical; Materials Science, Coatings & Films; Physics, ; Applied; Physics, Condensed Matter

Abstract

Silicon nanowires were created via the electroless etching technique using silver nitrate (AgNO3)/hydrofluoric acid (HF) solution. The prepared raw samples were oxidized for various intervals, so as to have an end result of various nanowire thicknesses. Scanning electron microscope (SEM) images were taken of the original nanowires, the oxidized nanowires and then the oxidized and etched (in HF solution) nanowires. When silicon nanowires are made, the area of exposed silicon undergoes "amplification," a formula for which is provided herein. When silicon nanowires are oxidized, the growth rate of the oxide layer varies according to the crystalline alignment. A formula for a polar plot is provided for illustrating the shape of a silicon nanowire after oxidation for various intervals, based on the Deal-Grove and Massoud models of oxidation. (C) 2012 Elsevier B.V. All rights reserved.

Journal Title

Applied Surface Science

Volume

258

Issue/Number

10

Publication Date

1-1-2012

Document Type

Article

Language

English

First Page

4607

Last Page

4613

WOS Identifier

WOS:000300991400061

ISSN

0169-4332

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