Abbreviated Journal Title
J. Appl. Phys.
FIELD-EFFECT TRANSISTORS; MODES; Physics, Applied
A polarized photoresponse to mm-wave radiation over the frequency range of 40 to 108 GHz is demonstrated in a grating-gated high electron mobility transistor (HEMT) formed by an InGaAs/InP heterostructure. The photoresponse is observed within the plasmon resonance absorption band of the HEMT, whose gate consists of a 9 mu m period grating that couples incident radiation to plasmons in the 2D electron gas. Gate-bias changes the channel carrier concentration, causing a corresponding change in photoresponse in agreement with theoretical expectations for the shift in the plasmon resonance band. The noise equivalent power is estimated to be 235 pW/Hz(1/2).
Journal of Applied Physics
Esfahani, N. Nader; Peale, R. E.; Buchwald, W. R.; Fredricksen, C. J.; Hendrickson, J. R.; and Cleary, J. W., "Millimeter-wave photoresponse due to excitation of two-dimensional plasmons in InGaAs/InP high-electron-mobility transistors" (2013). Faculty Bibliography 2010s. 3954.