Abbreviated Journal Title
Appl. Phys. Lett.
MEMORY RRAM DEVICES; OXIDE-FILMS; Physics, Applied
This letter shows that the NiO-based structure with different anodes has different resistive switching properties. A conical conductive filament (CF) model is proposed for oxygen vacancies distributed in NiO films. Modeling analysis reveals much larger dissolution velocity of CF near anodes than near cathodes during the reset process. Different interfaces shown in Auger electron spectroscopy can be bound with the model to reveal that CF is dissolved in the structure with Pt or Au as anodes, while CF remains constant if the anode material is Ti or Al, which can explain whether switching properties occur in the specific NiO-based structures.
Applied Physics Letters
Jia, Ze; Wang, Linkai; Zhang, Naiwen; Ren, Tianling; and Liou, Juin J., "Effects of anode materials on resistive characteristics of NiO thin films" (2013). Faculty Bibliography 2010s. 4155.