Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
GALLIUM NITRIDE; SEMICONDUCTORS; HARDNESS; GAN; DC; Physics, Applied
Abstract
AlGaN/GaN high electron mobility transistors were irradiated with Co-60 gamma-rays to doses up to 1000 Gy, in order to analyze the effects of irradiation on the devices' transport properties. Temperature-dependent electron beam-induced current measurements, conducted on the devices before and after exposure to gamma-irradiation, allowed for the obtaining of activation energies related to radiation-induced defects due to nitrogen vacancies. DC current-voltage measurements were also conducted on the transistors to assess the impact of gamma-irradiation on transfer, gate, and drain characteristics.
Journal Title
Applied Physics Letters
Volume
102
Issue/Number
6
Publication Date
1-1-2013
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Schwarz, C.; Yadav, A.; Shatkhin, M.; Flitsiyan, E.; Chernyak, L.; Kasiyan, V.; Liu, L.; Xi, Y. Y.; Ren, F.; Pearton, S. J.; Lo, C. F.; Johnson, J. W.; and Danilova, E., "Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors" (2013). Faculty Bibliography 2010s. 4663.
https://stars.library.ucf.edu/facultybib2010/4663
Comments
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