Title

Selective hydrogen gas nanosensor using individual ZnO nanowire with fast response at room temperature

Authors

Authors

O. Lupan; V. V. Ursaki; G. Chai; L. Chow; G. A. Emelchenko; I. M. Tiginyanu; A. N. Gruzintsev;A. N. Redkin

Comments

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Abbreviated Journal Title

Sens. Actuator B-Chem.

Keywords

ZnO nanowire; Sensor; Hydrogen; Focused ion beam; Nanosensor; METAL-OXIDE NANOSTRUCTURES; ION-IMPLANTED GAN; ZINC-OXIDE; SENSING; CHARACTERISTICS; CHEMICAL SENSORS; RAMAN-SCATTERING; THIN-FILMS; OPTICAL-PROPERTIES; NANOROD ARRAYS; PPB LEVELS; Chemistry, Analytical; Electrochemistry; Instruments & Instrumentation

Abstract

In this work, we report on a single ZnO nanowire-based nanoscale sensor fabricated using focused ion beam (FIB/SEM) instrument. We Studied the diameter dependence of the gas response and selectivity of ZnO nanowires (NWs) synthesized by chemical vapor phase growth method. The photoluminescence (PL) measurements were used to determine the deep levels related to defects which are presented in the ZnO nanomaterial as well as to evaluate the effect of thermal treatment in H-2 atmosphere on the emission from ZnO nanowires. We show chat sample annealed in hydrogen leads to passivation of recombination centers thus modifying the NWs properties. We studied the gas response and selectivity of these ZnO nanowires to H-2, NH3, i-Butane, CH4 gases at room temperature. Our results indicated that zinc oxide NWs hold a high promise for nanoscale sensor applications due to its capability to operate at room-temperature and its ability to tune the gas response and selectivity by the defect concentration and the diameter of ZnO nanowire. A method is proposed to reduce the nanosensor's recovery time through the irradiation with an ultraviolet radiation pulse. The sensing mechanisms of ZnO nanowires will be discussed. (C) 2009 Elsevier B.V. All rights reserved.

Journal Title

Sensors and Actuators B-Chemical

Volume

144

Issue/Number

1

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

56

Last Page

66

WOS Identifier

WOS:000274947800010

ISSN

0925-4005

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