Advanced Low-Voltage Power MOSFET Technology for Power Supply in Package Applications
Abbreviated Journal Title
IEEE Trans. Power Electron.
Asymmetric gate resistor; gate voltage pull-down circuit; integration; low-voltage power MOSFET; power loss; source-down structure power; MOSFET; stacked-die package; synchronous buck converters; CONVERTERS; FREQUENCY; Engineering, Electrical & Electronic
In this paper, a high-current dc-dc power supply in package is reported with an emphasis on the design aspects of the low- and high-side power MOSFETs embedded in the power module. A new NexFET structure with its source electrode on the bottom side of the die (source down) is designed to enable an innovative stacked-die PSiP technology with significantly reduced parasitic inductance and package footprint. A gate voltage pull-down circuitry monolithically integrated in the low-side NexFET is introduced to effectively prevent shoot-through faults even when a very low gate threshold voltage is used to reduce conduction and body diode reverse-recovery-related power losses. In addition, an asymmetric gate resistor circuitry is monolithically integrated in the high-side NexFET to minimize voltage ringing at the switch node. With all these novel device technology improvements, the new power supply in package module delivers a significant improvement in efficiency and offers an excellent solution for future high-frequency, high-current-density dc-dc converters.
Ieee Transactions on Power Electronics
"Advanced Low-Voltage Power MOSFET Technology for Power Supply in Package Applications" (2013). Faculty Bibliography 2010s. 4888.