Title

Decoherence and quantum interference assisted electron trapping in a quantum dot

Authors

Authors

A. El Halawany;M. N. Leuenberger

Comments

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Abbreviated Journal Title

Phys. Status Solidi B-Basic Solid State Phys.

Keywords

electronic states; electronic transport; nanostructures; quantum dots; semiconductors; RELAXATION; STATES; Physics, Condensed Matter

Abstract

We present a theoretical model for the dynamics of an electron that gets trapped by means of decoherence and quantum interference in the central quantum dot (QD) of a semiconductor nanoring (NR) made of five QDs, between 100 and 300 K. The electron's dynamics is described by a master equation with a Hamiltonian based on the tight-binding model, taking into account electron-LO phonon interaction. Based on this configuration, the probability to trap an electron with no decoherence is almost 27%. In contrast, the probability to trap an electron with decoherence is 70% at 100 K, 63% at 200 K and 58% at 300 K. Our model provides a novel method of trapping an electron at room temperature. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Journal Title

Physica Status Solidi B-Basic Solid State Physics

Volume

251

Issue/Number

8

Publication Date

1-1-2014

Document Type

Article

Language

English

First Page

1498

Last Page

1509

WOS Identifier

WOS:000340454200003

ISSN

0370-1972

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