Title

About Ge(Mn) diluted magnetic semiconductor

Authors

Authors

A. Portavoce; S. Bertaina; O. Abbes; L. Chow;V. Le Thanh

Comments

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Abbreviated Journal Title

Mater. Lett.

Keywords

Germanium; Magnesium; Diluted magnetic semiconductor; Spintronics; RESONANCE; Materials Science, Multidisciplinary; Physics, Applied

Abstract

Deposition of 0.5 monolayer of Mn by molecular beam epitaxy on the surface of a Ge(0 0 1) substrate, and annealing, allowed the fabrication of a cluster-free Ge(Mn) diluted solution. Electronic spin resonance (ESR) was used to study the magnetic properties of this solution. These measurements, combined with secondary ion mass spectrometry, atomic force microscopy, and Auger electron spectroscopy, show that the detected ferromagnetic signal is due to surface islands, while Mn atoms on Ge substitutional sites gives no detectable ESR signal. (C) 2014 Elsevier B.V. All rights reserved.

Journal Title

Materials Letters

Volume

119

Publication Date

1-1-2014

Document Type

Article

Language

English

First Page

68

Last Page

70

WOS Identifier

WOS:000332811500019

ISSN

0167-577X

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