Title

Hot Carrier Injection Stress Effect on a 65 nm LNA at 70 GHz

Authors

Authors

J. S. Yuan; Y. Xu; S. D. Yen; Y. Bi;G. W. Hwang

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Trans. Device Mater. Reliab.

Keywords

Hot electron; low noise amplifier; noise figure; radio frequency; small-signal power gain; CMOS; NOISE; PERFORMANCE; DEGRADATION; TRANSISTORS; AMPLIFIER; NMOSFETS; Engineering, Electrical & Electronic; Physics, Applied

Abstract

The hot carrier injection stress effect on a 65 nm low-noise amplifier at the 70 GHz range of operation has been studied. The experimental data show that the minimum noise figure increases (similar to 2 dB) and the maximum small-signal power gain decreases (similar to 3 dB) after 10 h of HCI overstress due to transconductance degradation as evidenced by 65 nm individual transistor measurement.

Journal Title

Ieee Transactions on Device and Materials Reliability

Volume

14

Issue/Number

3

Publication Date

1-1-2015

Document Type

Article

Language

English

First Page

931

Last Page

934

WOS Identifier

WOS:000341984600020

ISSN

1530-4388

Share

COinS