Title

An Explicit Surface Potential Calculation and Compact Current Model for AlGaN/GaN HEMTs

Authors

Authors

W. L. Deng; J. K. Huang; X. Y. Ma;J. J. Liou

Comments

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Abbreviated Journal Title

IEEE Electron Device Lett.

Keywords

AlGaN/GaN high-electron mobility transistor (HEMT); drain current; compact model; self-heating effect; MODFETS; DEVICES; Engineering, Electrical & Electronic

Abstract

In this letter, a new compact model for the AlGaN/GaN high-electron mobility transistors developed based on explicit solutions to the Fermi level and the surface potential is presented. Its simple calculation and high accuracy in predicting the surface potential and current-voltage characteristics make the model ideal for circuit simulation applications. This surface-potential-based compact model accounts for the self-heating effect by considering the temperature-dependent free-carrier mobility. The model is verified against numerical results and measured data under a wide range of bias conditions.

Journal Title

Ieee Electron Device Letters

Volume

36

Issue/Number

2

Publication Date

1-1-2015

Document Type

Article

Language

English

First Page

108

Last Page

110

WOS Identifier

WOS:000350334100008

ISSN

0741-3106

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