Title

Total ionizing dose sensitivity of function blocks in FRAM

Authors

Authors

K. Gu; J. J. Liou; W. Li; Y. Liu;P. Li

Comments

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Abbreviated Journal Title

Microelectron. Reliab.

Keywords

Ferroelectric random acces memory; Microbeam; Total ionizing dose; X-ray; Co-60; FERROELECTRIC NONVOLATILE MEMORIES; PZT CAPACITORS; MOS CAPACITORS; CHARGE YIELD; RADIATION; DEVICES; IRRADIATION; RETENTION; SYSTEMS; OXIDES; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

The total ionizing dose (TID) sensitivity of the function blocks, including the memory array, sense amplifier, row decoder, column decoder and I/O port, of the ferroelectric random access memory (FRAM) are investigated. An X-ray microbeam is used for the selective irradiation and detailed detection. The ferroelectric memory array is proved to have higher resistance to TID than the peripheral control circuitry, whereas the sense amplifier is the most sensitive parts in the FRAM circuitry. The failure phenomenon is studied when each function block is irradiated, and the failure mechanism is discussed based on each block's technological and circuital characteristics. In addition, the Co-60 gamma ray irradiation test is also performed to offer a comparison of the spot and global irradiation. (C) 2015 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

55

Issue/Number

6

Publication Date

1-1-2015

Document Type

Article

Language

English

First Page

873

Last Page

878

WOS Identifier

WOS:000355044500003

ISSN

0026-2714

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