Studies on Electrical Properties of RF Sputtered Deposited Boron Carbon Nitride Thin Films
Abbreviated Journal Title
ECS J. Solid State Sci. Technol.
CHEMICAL-VAPOR-DEPOSITION; DIELECTRIC-CONSTANT; MECHANICAL-PROPERTIES; BCN FILMS; B-C; COATINGS; Materials Science, Multidisciplinary; Physics, Applied
Boron carbon nitride (BCN) films were prepared by reactive magnetron sputtering from a B4C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films were deposited at various N-2/Ar gas flow ratios, substrate temperatures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations were performed as a function of deposition parameters. By varying the nitrogen concentration in the deposited films and substrate deposition temperatures, the electrical properties of BCN can be tuned accordingly. BCN films having dielectric constant as low as 2.13 with high dielectric breakdown strength of 3.4 MV/cm and resistivity of 3 x 10(12) Omega.cm were achieved. (C) The Author(s) 2015. Published by ECS. All rights reserved.
Ecs Journal of Solid State Science and Technology
"Studies on Electrical Properties of RF Sputtered Deposited Boron Carbon Nitride Thin Films" (2015). Faculty Bibliography 2010s. 6762.