Title

Studies on Electrical Properties of RF Sputtered Deposited Boron Carbon Nitride Thin Films

Authors

Authors

A. Prakash;K. B. Sundaram

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

ECS J. Solid State Sci. Technol.

Keywords

CHEMICAL-VAPOR-DEPOSITION; DIELECTRIC-CONSTANT; MECHANICAL-PROPERTIES; BCN FILMS; B-C; COATINGS; Materials Science, Multidisciplinary; Physics, Applied

Abstract

Boron carbon nitride (BCN) films were prepared by reactive magnetron sputtering from a B4C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films were deposited at various N-2/Ar gas flow ratios, substrate temperatures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations were performed as a function of deposition parameters. By varying the nitrogen concentration in the deposited films and substrate deposition temperatures, the electrical properties of BCN can be tuned accordingly. BCN films having dielectric constant as low as 2.13 with high dielectric breakdown strength of 3.4 MV/cm and resistivity of 3 x 10(12) Omega.cm were achieved. (C) The Author(s) 2015. Published by ECS. All rights reserved.

Journal Title

Ecs Journal of Solid State Science and Technology

Volume

4

Issue/Number

5

Publication Date

1-1-2015

Document Type

Article

Language

English

First Page

N25

Last Page

N29

WOS Identifier

WOS:000352224200003

ISSN

2162-8769

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