Authors

M. Arif; J. H. Liu; L. Zhai;S. I. Khondaker

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

carrier mobility; crystal morphology; nanoelectromechanical devices; nanostructured materials; organic field effect transistors; organic; semiconductors; surface treatment; THIN-FILM TRANSISTORS; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); EFFECT; MOBILITY; MOLECULAR-WEIGHT; CONJUGATED POLYMERS; POLYTHIOPHENE; TRANSPORT; PERFORMANCE; DEPENDENCE; MORPHOLOGY; Physics, Applied

Abstract

We report on the fabrication of crystalline nanoribbon network field effect transistors (FETs) using low molecular weight (M(W)) poly(3-hexylthiophene) (P3HT) with different surface treatments and compare with thin film FETs cast from the same M(W) regioregular P3HT. Nanoribbon FET shows improved performance with a maximum mobility of 0.012 cm(2)/V s and current on/off ratios of 6.5x10(4) due to unique crystalline structure and morphology. With various surface treatments, the nanoribbon FETs show less variation in device mobilities, while thin film FETs show more than ten times variation in device mobilities and up to 100 times change in current on/off ratios.

Journal Title

Applied Physics Letters

Volume

96

Issue/Number

24

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000278911500059

ISSN

0003-6951

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