Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
annealing; boron; diffusion; doping profiles; ion implantation; metallic; thin films; nickel alloys; secondary ion mass spectra; silicon alloys; solubility; surface chemistry; AMORPHOUS-SILICON CRYSTALLIZATION; THERMAL-STABILITY; CMOS; SI; REDISTRIBUTION; SILICIDATION; TECHNOLOGIES; Physics, Applied
Abstract
B diffusion in implanted Ni2Si and NiSi layers has been studied using secondary ion mass spectrometry, and compared to B redistribution profiles obtained after the reaction of a Ni layer on a B-implanted Si(001) substrate, in same annealing conditions (400-550 degrees C). B diffusion appears faster in Ni2Si than in NiSi. The B solubility limit is larger than 10(21) atom cm(-3) in Ni2Si, while it is similar to 3x10(19) atom cm(-3) in NiSi. The solubility limit found in NiSi is in agreement with the plateau observed in B profiles measured in NiSi after the reaction of Ni on B-implanted Si.
Journal Title
Applied Physics Letters
Volume
96
Issue/Number
5
Publication Date
1-1-2010
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Blum, I.; Portavoce, A.; Chow, L.; Mangelinck, D.; Hoummada, K.; Tellouche, G.; and Carron, V., "B diffusion in implanted Ni2Si and NiSi layers" (2010). Faculty Bibliography 2010s. 7005.
https://stars.library.ucf.edu/facultybib2010/7005
Comments
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