PV Characterization of CIGS2 Thin Film Solar Cells
Secondary Author(s)
Kulkarni, Sachin; Ghongadi, Shantinath
Keywords
CIGS2 thin film; Solar cells; PV characterization; Quantum efficiency; Solar cell efficiency; Chemical bath deposition; Sulfurization process
Abstract
CIGS2 thin films were prepared by sulfurization of CuGa/In precursor on Mo-coated glass substrates in Ar:H2S(4%) mixture at 475''C. PV parameters of the best CIGS2 solar cells measured under AM 0 conditions at NASA GRC were as follows: Voc=739 mV, Jsc=26.01mA/cm2 , FF=63.7%, and ''=8.95%. Detailed current versus voltage and quantum efficiency analysis of ~9% (AM 0) efficient CIGS2 cells showed them to be normal, without serious limitations and some ways promising. Formation of a buried n+p homojunction probably due to Cd doping during CdS chemical bath deposition was inferred from enhancement of collection at low wavelengths under reverse bias. Such a junction is known to lead to high conversion efficiency. Values of series resistance Rs, shunt resistance Rp, diode factor A, and reverse saturation current Jo were ~0.6 '' cm2, ~1160 '' cm2, ~2.1 and ~2.6'~168 A cm-2 respectively. Preparation of ~8% AM1.5 efficient CIGS2 thin-film solar cells on Mo-coated stainless steel foil substrates for ultra lightweight solar cells is described.
Date Published
9-15-2000
Identifiers
624
Subjects
Solar cells; Thin films; Photovoltaic power generation; Chemical processes; Materials--Electric properties; Solar energy
Local Subjects
PV Thin-Films
Type
Text; Document
Collection
FSEC Energy Research Center® Collection
STARS Citation
Florida Solar Energy Center and Dhere, Neelkanth, "PV Characterization of CIGS2 Thin Film Solar Cells" (2000). FSEC Energy Research Center®. 624.
https://stars.library.ucf.edu/fsec/624