PV Characterization Of CIGS2 Thin Film Solar Cells
Kulkarni, Sachin; Ghongadi, Shantinath
CIGS2 thin films were prepared by sulfurization of CuGa/In precursor on Mo-coated glass substrates in Ar:H2S(4%) mixture at 475''C. PV parameters of the best CIGS2 solar cells measured under AM 0 conditions at NASA GRC were as follows: Voc=739 mV, Jsc=26.01mA/cm2 , FF=63.7%, and ''=8.95%. Detailed current versus voltage and quantum efficiency analysis of ~9% (AM 0) efficient CIGS2 cells showed them to be normal, without serious limitations and some ways promising. Formation of a buried n+p homojunction probably due to Cd doping during CdS chemical bath deposition was inferred from enhancement of collection at low wavelengths under reverse bias. Such a junction is known to lead to high conversion efficiency. Values of series resistance Rs, shunt resistance Rp, diode factor A, and reverse saturation current Jo were ~0.6 '' cm2, ~1160 '' cm2, ~2.1 and ~2.6'~168 A cm-2 respectively. Preparation of ~8% AM1.5 efficient CIGS2 thin-film solar cells on Mo-coated stainless steel foil substrates for ultra lightweight solar cells is described.
Florida Solar Energy Center and Dhere, Neelkanth, "PV Characterization Of CIGS2 Thin Film Solar Cells" (2000). FSEC Energy Research Center®. 624.