Abstract

Compositions and methods for fabrication or synthesis of high aspect ratio (up to >150) CdS:Mn/ZnS core/shell nanowires (CSNWs) are disclosed for the first time. The CSNW solvothermal synthesis involved two steps - the formation of Mn doped CdS core followed by the growth of a ZnS outer shell. The nanowire growth process is engineered in such a way that the ZnS layer grows radially onto the prematurely growth CdS:Mn core prior to the formation of its well faceted surface. Transmission electron microscopy (TEM) and other characterization tehcniques confirmed the formartion of uniform, thin (5-8 nm in diameter) CSNWs with a high aspect ratioup to >150. This solvothermal method is simple, versatile and useful in a large scale production process to synthesize thin, ultra-long CSNWs with and without dopants.

Document Type

Patent

Patent Number

US 8,142,890 B1

Application Serial Number

12/328,233

Issue Date

3-27-2012

Current Assignee

UCFRF

Assignee at Issuance

UCFRF

College

NanoScience Technology Center

Department

NanoScience Technology Center

Allowance Date

11-28-2011

Filing Date

12-4-2008

Assignee at Filing

UCFRF

Filing Type

Nonprovisional Application Record

Donated

no

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