Title

Passive Broadband High Dynamic Range Semiconductor Limiters

Abstract

The principles of operation of semiconductor optical limiters which utilize two-photon absorption and free-carrier induced defocusing are described. We present a review of early work using psec pulses at 532 nm in ZnSe, in which the problem of damage in solid state limiters is overcome by optimizing the focusing geometry. Limiting energies as loW as 10 nJ are seen, and a dynamic range (damage energy divided by limiting energy) in excess of 104 is demonstrated. The somewhat complicated propagation theory is simplified into a set of scaling rules which are used to predict operating characteristics of semiconductor limiters at longer wavelengths and for shorter pulses. We present new limiting data obtained with longer pulses in ZnSe, in CdTe at 1.06 μm and InSb at 10.6 μm, and we compare these results with the scaling rules. © 1989 SPIE.

Publication Date

8-30-1989

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

1105

Number of Pages

103-113

Document Type

Article; Proceedings Paper

Identifier

scopus

DOI Link

https://doi.org/10.1117/12.960616

Socpus ID

84911751293 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84911751293

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