Title

Orientational Dependence Of Transient Gratings In Multiple Quantum Well Structures

Abstract

Recent experiments measuring transient grating decay in multiple quantum well structures have revealed a strong orientation dependence for the decay rate. The authors argue that this dependence can be explained by a differential cross-well diffusion of electrons and holes leading to charge separation and drift fields enhancing the in-plane diffusion. The analysis suggests that the cross-well diffusion rate mechanism changes at some critical angle of grating orientation.

Publication Date

12-1-1989

Publication Title

Semiconductor Science and Technology

Volume

4

Issue

8

Number of Pages

696-698

Document Type

Article

Identifier

scopus

DOI Link

https://doi.org/10.1088/0268-1242/4/8/016

Socpus ID

36149029329 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/36149029329

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