Title

Modeling The Heterojunction Bipolar Transistor For Integrated Circuit Simulation

Abstract

Based on the concept of the conventional Gummel-Poon model for Si homojunction bipolar transistaors, a comprehensive physics-based large-scale heterojunction bipolar transistor (HBT) model is developed for integrated-circuit simulation. The model can be implemented directly into circuit simulators such as SPICE. Heterojunction effects as well as physical properties of III-V compound materials are included. A small-signal heterojunction bipolar transistor model can be readily derived by linearizing the circuit elements in the model developed.

Publication Date

12-1-1989

Number of Pages

219-222

Document Type

Article; Proceedings Paper

Identifier

scopus

Socpus ID

0024902874 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0024902874

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