Modeling The Heterojunction Bipolar Transistor For Integrated Circuit Simulation
Based on the concept of the conventional Gummel-Poon model for Si homojunction bipolar transistaors, a comprehensive physics-based large-scale heterojunction bipolar transistor (HBT) model is developed for integrated-circuit simulation. The model can be implemented directly into circuit simulators such as SPICE. Heterojunction effects as well as physical properties of III-V compound materials are included. A small-signal heterojunction bipolar transistor model can be readily derived by linearizing the circuit elements in the model developed.
Number of Pages
Article; Proceedings Paper
Source API URL
Liou, J. J.; Drafts, W.; and Yuan, J. S., "Modeling The Heterojunction Bipolar Transistor For Integrated Circuit Simulation" (1989). Scopus Export 1980s. 402.