Title
Modeling The Heterojunction Bipolar Transistor For Integrated Circuit Simulation
Abstract
Based on the concept of the conventional Gummel-Poon model for Si homojunction bipolar transistaors, a comprehensive physics-based large-scale heterojunction bipolar transistor (HBT) model is developed for integrated-circuit simulation. The model can be implemented directly into circuit simulators such as SPICE. Heterojunction effects as well as physical properties of III-V compound materials are included. A small-signal heterojunction bipolar transistor model can be readily derived by linearizing the circuit elements in the model developed.
Publication Date
12-1-1989
Number of Pages
219-222
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0024902874 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0024902874
STARS Citation
Liou, J. J.; Drafts, W.; and Yuan, J. S., "Modeling The Heterojunction Bipolar Transistor For Integrated Circuit Simulation" (1989). Scopus Export 1980s. 402.
https://stars.library.ucf.edu/scopus1980/402