Modeling The Charge Injection Process In Acoustic Charge Transport Devices
A method for modeling the charge injection process in monolithic acoustic charge transport (ACT) devices on GaAs has been developed. The method uses solutions of the two-dimensional Poisson equation to obtain the potential and charge distributions in the charge-injection region of an ACT device. The model predicts dependence of injected packet size and overall delay on the input bias. It has been left flexible to allow variations in all simulation parameters, including SAW (surface acoustic wave) wavelength, surface-metallization structure, and nonconstant epilayer doping, in order to investigate their effects on the charge injection process. Derivation of the method and results of simulations are presented.
Ultrasonics Symposium Proceedings
Number of Pages
Article; Proceedings Paper
Source API URL
Knapp, S. M.; Liou, J. J.; and Malocha, D. C., "Modeling The Charge Injection Process In Acoustic Charge Transport Devices" (1989). Scopus Export 1980s. 406.