Multi-Wavelength Generation At 1.55 Μm From An External Cavity Semiconductor Laser
Optical analog to digital conversion schemes require a sampling source of high repetition rate, low temporal jitter, low amplitude noise, and short pulse duration to achieve the desired sampling rate and number of bits of resolution. We report on the development of an actively mode-locked semiconductor external cavity laser system where the emission is comprised of multiple wavelengths nominally centered around 1.55 microns. Cavity design includes an intra-cavity grating to produce a spatially dispersed optical spectral filtering plane. Amplitude filtering in this spectral plane serves to flatten the effective gain and a rectangular aperture array selects those wavelengths which are allowed to lase. Modelocked at 311 MHz and producing 8 spectral lines, the laser provides a sampling rate of approximately 2.5 GHz. Temporal interleaving of the pulse train by factor 4 increases the sampling rate to 10 GHz.
Proceedings of SPIE - The International Society for Optical Engineering
Number of Pages
Article; Proceedings Paper
Source API URL
Park, Eric D.; Abeles, Joseph H.; and Braun, Alan, "Multi-Wavelength Generation At 1.55 Μm From An External Cavity Semiconductor Laser" (2000). Scopus Export 2000s. 1243.