Efficient And Practical Mos Statistical Model For Digital Applications
A practical approach of extracting MOS device BSIM3 model parameters to represent process variations is presented. Based on this approach, the performance spread of MOS digital circuit can be predicted. The extraction scheme uses only end-of-line data so no extra measurements are needed. By integrating the model with routine data from fabrication line, the statistical model can be built efficiently and updated frequently to reflect process changes. The developed statistical model is applied to the 0.25 μm technology and verified on a 501-stage ring oscillator circuit.
Proceedings - IEEE International Symposium on Circuits and Systems
Article; Proceedings Paper
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Zhang, Q.; Liou, J. J.; and McMacken, J., "Efficient And Practical Mos Statistical Model For Digital Applications" (2000). Scopus Export 2000s. 1263.