Analytical Mosfet Breakdown Model Including Self-Heating Effect
This paper presents an analytical breakdown model including self-heating effect (SHE) for NMOSFET devices. Model evaluation is taken for a wide ambient temperature range, from room temperature to 200 °C. It is found that the device self-heating effect is suppressed when ambient temperature is increased. In addition, our results suggest that the conventional MOSFET breakdown model without considering the self-heating effect can overestimate the breakdown characteristics for the short-channel devices.
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Ho, C. S.; Liou, J. J.; and Chen, Frank, "Analytical Mosfet Breakdown Model Including Self-Heating Effect" (2000). Scopus Export 2000s. 1293.