Impact Of Cmp Consumables On Copper Metallization Reliability


Over the past few years, we, as well as others, have systematically characterized the device reliability issues associated with the introduction of copper metallization into IC fabrication. Specifically, we have examined the impact of interfacial cleanliness and material roughness on the electromigration reliability of dual-damascene structures, We have identified a CMP-related reliability degradation and attributed it, in part, to the 'in-process' degradation of polyurethane-based CMP pads. To gain better understanding of these correlations, we have studied in detail, the interactions of simulated copper slurries and pristine segmented polyurethanes. These studies clearly show that polyurethane is fundamentally incompatible with some of the chemicals used in copper CMP, such as hydrogen peroxide. We have incorporated the knowledge from these studies into the design and fabrication of a new class of polyolefins-based application specific pads (ASP). In this paper we review experimental copper polishing data on both polyurethane and ASP pads. We explain the pad performance differences between the polyurethane and ASP pads, on the basis the fundamental physics and chemistry of the base polymers used in the pads fabrication.

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Proceedings - Electrochemical Society



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Article; Proceedings Paper

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3042810291 (Scopus)

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