Title
High Conversion Efficiency Mass-Limited Laser Plasma Source For Euv Lithography
Abstract
EUV lithography requires a high-efficiency light source at 13nm that is free from debris. Our mass-limited tin material laser plasma source provides the highest conversion of laser-light to useful in-band EUV emission.
Publication Date
1-1-2003
Publication Title
OSA Trends in Optics and Photonics Series
Volume
88
Number of Pages
1988-1991
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
8744307263 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/8744307263
STARS Citation
Keyser, C.; Koay, C. S.; and Takenoshita, K., "High Conversion Efficiency Mass-Limited Laser Plasma Source For Euv Lithography" (2003). Scopus Export 2000s. 1891.
https://stars.library.ucf.edu/scopus2000/1891
COinS