Effect Of Gate Oxide Breakdown On Rf Device And Circuit Performance
Gate oxide breakdown
The degradation of S-parameters of 0.16 μm NMOS devices due to gate oxide breakdown is examined. An equivalent circuit model for MOSFETs after gate oxide breakdown is proposed. The influence of nMOSFET BD on the performance of a low noise amplifier is studied using the equivalent circuit model. Depending on which device and how many fingers breakdown, there is a nonzero probability that the circuit continues to work, despite that the performance of S-parameters and noise figure drastically degrades.
IEEE International Reliability Physics Symposium Proceedings
Number of Pages
Article; Proceedings Paper
Source API URL
Yang, Hong; Yuan, J. S.; and Xiao, Enjun, "Effect Of Gate Oxide Breakdown On Rf Device And Circuit Performance" (2003). Scopus Export 2000s. 1934.