Analyzing Internal-Switching Induced Simultaneous Switching Noise
Analytical models; Circuit noise; Circuit simulation; Impedance; Inductance; MOSFETs; Negative feedback; Rails; Switching circuits; Wire
The internal-switching induced simultaneous switching noise (SSN) is studied in the paper. Unlike ground bounce caused by driving off-chip loading, both power-rail and ground-rail wire/pin impedances are important in evaluating internal SSN, and the double negative feedback mechanism should be accounted for. Based on the lumped-model analysis and taking into account the parasitic effects and velocity-saturation effect of MOS transistors, a novel analytical model is developed which includes both switching and non-switching gates. The proposed model is employed to analyze on-chip decoupling capacitance, wire/pin inductance effect and loading effect analytically. Good agreements with SPICE simulations are obtained for submicron technology.
Proceedings - International Symposium on Quality Electronic Design, ISQED
Number of Pages
Article; Proceedings Paper
Source API URL
Yang, Li and Yuan, J. S., "Analyzing Internal-Switching Induced Simultaneous Switching Noise" (2003). Scopus Export 2000s. 2053.