Electrical Characterization Of Laser-Irradiated 4H-Sic Wafer
Highly conductive tracks are generated in low-doped epilayers on 4H-SiC wafers using a laser-direct write technique. The current-voltage characteristics are measured to study the effect of the applied voltage on the electric resistance and the surface contact of the irradiated tracks. The effect of multiple irradiations on the electronic properties of the fabricated tracks was investigated and compared with the effect of the conventional annealing process. A laser doping process was used to achieve n-type as well as p-type impurity doping in the substrate. The electronic properties of the doped tracks are measured and compared with those of the untreated wafers. Microstructural observation and surface analysis of the irradiated tracks are studied. Laser fabrication of rectifying contact on SiC substrates is demonstrated.
Materials Research Society Symposium - Proceedings
Number of Pages
Article; Proceedings Paper
Source API URL
Salama, I.; Quick, N. R.; and Kar, A., "Electrical Characterization Of Laser-Irradiated 4H-Sic Wafer" (2002). Scopus Export 2000s. 2898.