Title

A Method To Extract Mobility Degradation And Total Series Resistance Of Fully-Depleted Soi Mosfets

Keywords

Mobility degradation; Parameter extraction; Series resistance; SOI MOSFETs; Threshold voltage; Velocity saturation

Abstract

Free-carrier mobility degradation in the channel and drain/source series resistance are two important parameters limiting the performance of MOS devices. In this paper, we present a method to extract these parameters from the drain current versus gate voltage characteristics of fully-depleted (FD) SOI MOSFETs operating in the saturation region. This method is developed based on an integration function which reduces errors associated with the extraction procedure and on the d.c. characteristics of MOS devices having several different channel lengths. Simulation results and measured data of FD SOI MOSFETs are used to test and verify the method developed.

Publication Date

1-1-2002

Publication Title

IEEE Transactions on Electron Devices

Volume

49

Issue

1

Number of Pages

82-88

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/16.974753

Socpus ID

0036257408 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0036257408

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