Rf Circuit Performance Degradation Due To Soft Breakdown And Hot-Carrier Effect In Deep-Submicrometer Cmos Technology
CMOS; Constant voltage stress; Hot carriers; Low-noise amplifier; Power amplifier; Scattering parameters; Soft breakdown
A systematic study of RF circuit performance degradation subject to oxide soft breakdown (SBD) and hot-carrier (HC) stress is presented in this paper. DC and RF characteristics before and after stress are extracted from the experimental data. The effects of SBD and lie stress on s-parameters, cutoff frequency, third-order interception point, and noise parameters are examined. The performance drifts of gain, noise figure, linearity, and input matching of the RF low-noise amplifier are demonstrated by SpectreRF simulation results based on measured device data.
IEEE Transactions on Microwave Theory and Techniques
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Li, Qiang; Zhang, Jinlong; and Li, Wei, "Rf Circuit Performance Degradation Due To Soft Breakdown And Hot-Carrier Effect In Deep-Submicrometer Cmos Technology" (2001). Scopus Export 2000s. 492.