Minority Electron Transport Anisotropy In P-Type AlXGa1-XN/Gan Superlattices
Electron microscopy; Semiconductor materials; Superlattices
The minority electron diffusion length, L, in Mg-doped molecular beam epitaxy (MBE) grown p-type AlxGa1-xN/GaN superlattices with aluminum content x = 0.1 and 0.2 was measured perpendicular and parallel to the superlattice planes by the electron beam induced current (EBIC) technique. A large anisotropy in the transport properties was observed with the effect varying from 1:3 to 1:6. We attribute an experimentally observed diffusion length anisotropy to minority electron scattering during transport across the potential barriers of the superlattice. Reference p-GaN samples were also investigated, and the diffusion length was observed to be isotropic in both metal-organic chemical vapor deposition (MOCVD) (L = 0.5 μm) and MBE (L = 0.27 μm) grown samples.
IEEE Transactions on Electron Devices
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Chernyak, Leonid; Osinsky, Andrei; and Fuflyigin, Vladimir N., "Minority Electron Transport Anisotropy In P-Type AlXGa1-XN/Gan Superlattices" (2001). Scopus Export 2000s. 511.