Statistical Modeling Of Mos Devices Based On Parametric Test Data For Improved Ic Manufacturing
In the manufacturing of VLSI circuits, engineering designs should take into consideration random variations arising from processing. In this paper, statistical modeling of MOS devices is reviewed, and effective and practical models are developed to predict the performance spread of MOS circuits due to the process variations. To illustrate their applications, the models are applied to the 0.25 μm CMOS technology, and measured data are included in support of the model calculations.
Proceedings of the IEEE Hong Kong Electron Devices Meeting
Number of Pages
Article; Proceedings Paper
Source API URL
Liou, J. J.; Zhang, Q.; and McMacken, J., "Statistical Modeling Of Mos Devices Based On Parametric Test Data For Improved Ic Manufacturing" (2001). Scopus Export 2000s. 583.