Hole Detrapping Effect On Gate Oxide Breakdown Under Dc And Ac Stresses
The closed form expressions for time dependent dielectric breakdown (TDDB), were derived for both DC and AC stress conditions, including the hole detrapping effect. It was found that the hole detrapping effect in the unified model can give better prediction for the lifetime of a thin gate oxide. The model predictions were compared with the experimental results.
International Integrated Reliability Workshop Final Report
Number of Pages
Article; Proceedings Paper
Source API URL
Duan, Xiaodong; Wu, Wen; and Yuan, J. S., "Hole Detrapping Effect On Gate Oxide Breakdown Under Dc And Ac Stresses" (2000). Scopus Export 2000s. 733.