Improved Substrate Current Model For Deep Submicron Cmos Transistors
An improved substrate current model, incorporating the drain and gate bias dependent velocity saturation region, was described. The substrate current is used for predicting the lifetime of the devices and circuits, subject to hot carrier stressing. The model was used to simulate the transient substrate current in circuit operating conditions, to predict the device and circuit lifetime.
International Integrated Reliability Workshop Final Report
Number of Pages
Article; Proceedings Paper
Source API URL
Li, Wei; Yuan, J. S.; and Chetlur, Sundar, "Improved Substrate Current Model For Deep Submicron Cmos Transistors" (2000). Scopus Export 2000s. 738.