Deposition And Optical Studies Of Silicon Carbide Nitride Thin Films
Thin films of silicon carbide nitride (SiCN) have been prepared by reactive radioactive frequency (r.f.) sputtering using SiC target and nitrogen as the reactant gas. Deposition rates are studied as a function of deposition pressures and argon-nitrogen flow ratios. The optical absorption studies indicated the band edge shifting of the films when the nitrogen ratios are increased during deposition. Fourier transform infrared spectroscopy (FTIR) analysis on the films indicated several stretching modes corresponding to SiC, SiN and CN compositions.
Thin Solid Films
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Sundaram, K. B. and Alizadeh, J., "Deposition And Optical Studies Of Silicon Carbide Nitride Thin Films" (2000). Scopus Export 2000s. 825.