Title

Deposition And Optical Studies Of Silicon Carbide Nitride Thin Films

Abstract

Thin films of silicon carbide nitride (SiCN) have been prepared by reactive radioactive frequency (r.f.) sputtering using SiC target and nitrogen as the reactant gas. Deposition rates are studied as a function of deposition pressures and argon-nitrogen flow ratios. The optical absorption studies indicated the band edge shifting of the films when the nitrogen ratios are increased during deposition. Fourier transform infrared spectroscopy (FTIR) analysis on the films indicated several stretching modes corresponding to SiC, SiN and CN compositions.

Publication Date

7-17-2000

Publication Title

Thin Solid Films

Volume

370

Issue

1

Number of Pages

151-154

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0040-6090(00)00956-1

Socpus ID

0033690662 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0033690662

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