Statistical Modeling Of Mos Devices And Ics Based On End-Of-Line Manufacturing Data
A practical and efficient statistical MOSFET model based on the industry standard BSIM3 model and routine manufacturing data is developed. The model allows for the prediction of performance spread of MOS devices and integrated circuits at the end of manufacturing line and can be updated frequently to reflect process changes. As a result, the statistical model developed can be used to reduce the MOS IC development cycle time and manufacturing cost. The statistical model is applied to the 0.25 μm MOS technology and verified on different MOS devices and two 501-stage ring oscillator circuits.
2000 Semiconductor Manufacturing Technology Workshop
Number of Pages
Article; Proceedings Paper
Source API URL
Zhang, Q.; Liou, J. J.; and McMacken, J., "Statistical Modeling Of Mos Devices And Ics Based On End-Of-Line Manufacturing Data" (2000). Scopus Export 2000s. 939.